t4 - lds - 0192, rev . 2 (111684) ?2011 microsemi corporation page 1 of 6 2n3418 thru 2n3421 available on commercial versions npn med ium power silicon transistor qualified per mil - prf - 19500/393 qualified levels : jan, jantx and jantxv description this family of high - fr equency, epitaxial planar transistors feature low saturation voltage. these devices are also available in to - 39 and low profile u4 packaging. microsemi also offers numerous other transistor products to meet higher and lower power ratings with various swit ching speed requirements in both through - hole and surface - mount packages. to -5 package also available in : to - 39 package ( short leaded) 2n3418s C 2n3421s u4 package (surfa ce mount) 2n3418u4 C 2n3421u 4 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n3418 throu gh 2n3421 series. ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/393. ? rohs compliant versions available (commercial grade only) . ? v ce (sat) = 0.25 v @ i c = 1 a. ? rise time t r = 0.22 s max @ i c = 1.0 a, i b1 = 100 ma . ? fall time t f = 0.20 s max @ i c = 1.0 a, i b2 = - 100 ma . applications / benefits ? general purpo se transistors for medium power applications requiring high frequency switching and low package profile. ? military and other high - reliability applications. maximum ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 682 2298 website: www.microsemi.com parameters / test conditions symbol 2n3418 2n3420 2n3419 2n3421 unit collector - emitter voltage v ceo 60 80 v collector -ba se voltage v cbo 85 125 v emitter - base voltage v ebo 8 v collector current tp <= 1 ms, d uty c ycle <= 50% i c 3 5 a total power dissipation @ t a = +25 c (1) @ t c = +100 c (2) p d 1 5 w operating & storage junction temperature range t j , t stg - 65 to +200 c notes : 1. derate linearly 5.72 mw/c for t a > +25 c. 2. derate linearly 150 mw/c for t c > +100 c. downloaded from: http:///
t4 - lds - 0192, rev . 2 (111684) ?2011 microsemi corporation page 2 of 6 2n3418 thru 2n3421 mechanical and packaging ? case: hermetically sealed, k ovar base, n ickel cap ? marking: part number, d ate c ode, m anufacturers id ? polarity: see p ackage d imensions on last page. part nomenclature jan 2n3418 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number (see electrical characteristic s table) rohs compliance e3 = rohs compliant ( available on commercial grade only ) blank = non - rohs compliant symbols & definitions symbol definition c obo c ommon - base open - circuit output capa citance . i ceo c ollector cutoff current, base open . i cex c ollector cutoff current, circuit between base and emitter . i ebo e mitter cutoff current, collector open . h fe c ommon - emitter static forward current transfer ratio . v ceo c ollector - emitter voltage, base open . v cbo c ollector - emitter voltage, emitter open . v ebo e mitter - base voltage, collector open . downloaded from: http:///
t4 - lds - 0192, rev . 2 (111684) ?2011 microsemi corporation page 3 of 6 2n3418 thru 2n3421 electrical characteristics (t a = +25c, unless otherwise noted) off character istics parameters / test conditions symbol min. max. unit collector - em itter breakdown current v (br)ceo v i c = 50 ma, i b = 0 2n3418, 2n3420 2n3419, 2n3421 60 80 collector - emitter cutoff current i cex 0.3 0.3 a v be = - 0.5 v, v ce = 80 v v be = - 0.5 v, v ce = 120 v 2n3418, 2n3420 2n3419, 2n3421 collector - base cutoff current v ce = 45 v, i b = 0 v ce = 60 v, i b = 0 2n3418, 2n3420 2n3419, 2n3421 i ceo 5.0 5.0 a emitter - base cutoff current v eb = 6.0 v, i c = 0 v eb = 8.0 v, i c = 0 i ebo 0.5 10 a on character is tics (1) parameters / test conditions symbol min. ma x. unit forward - current transfer ratio h fe i c = 100 ma, v ce = 2.0 v 2n3418, 2n3419 2n3420 , 2n3421 20 40 i c = 1.0 a, v ce = 2.0 v 2n3418, 2n3419 2n3420 , 2n3421 20 40 60 120 i c = 2.0 a, v ce = 2.0 v 2n3418, 2n3419 2n3420 , 2n3421 15 30 i c = 5.0 a, v ce = 5.0 v 2n3418, 2n3419 2n3420 , 2n3421 10 15 collector - emitter saturation voltage v ce(sat) v i c = 1.0 a, i b = 0.1 a i c = 2.0 a, i b = 0.2 a 0.25 0.5 base - emitter saturation voltage i c = 1.0 a, i b = 0.1 a i c = 2.0 a, i b = 0.2 a v be(sat) 0.6 0.7 1.2 1.4 v dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of common emitter small - signal short circuit forward current transfer ratio |h fe | 1.3 0.8 i c = 0.1 a, v ce = 10 v, f = 20 mhz output capacita nce c obo 150 pf v cb = 10 v, i e = 0, 100 khz f 1.0 mhz notes: (1 ) pulse test: pulse width = 300 s, duty cycle 2.0% . downloaded from: http:///
t4 - lds - 0192, rev . 2 (111684) ?2011 microsemi corporation page 4 of 6 2n3418 thru 2n3421 electrical characteristics (t a = +25c, unless otherwise noted) continued switching characteristics parameters / test conditions (for all symbols) symbol min. max. unit delay time rise time v be(off) = - 3.7 v, i c = 1.0 a, i b1 = 100 ma t d t r 0.08 0.22 s storage time fall time v be(off) = - 3.7 v , i c = 1.0 a, i b2 = - 100 ma t s t f 1.10 0.20 s turn - off time v be(off) = -3 .7 v , i c = 1.0 a, i b2 = - 100 ma, r l = 20 ? t off t off 1.20 s safe operating area dc test t c = + 100 c, 1 cycle, t > 1.0 s test 1 v ce = 5.0 v, i c = 3.0 a test 2 v ce = 37 v, i c = 0.4 a test 3 v ce = 60 v, i c = 0.185 a v ce = 80 v, i c = 0.12 a 2n3418, 2n3420 2n3419, 2n3421 clamped switching t a = + 25 c, i b = 0.5 a, i c = 3.0 a downloaded from: http:///
t4 - lds - 0192, rev . 2 (111684) ?2011 microsemi corporation page 5 of 6 2n3418 thru 2n3421 graphs t c ( o c ) (case) figure 1 temperature - power derating curve notes: thermal resistance junction to case = 4.5 o c/w max finish - alloy temp = 175 o c time (s) figure 2 maximum thermal impedance note: t c = +25 c, thermal resistance r jc = 4.5 c/w dc operation maximum rating (w) theta ( o c /w) downloaded from: http:///
t4 - lds - 0192, rev . 2 (111684) ?2011 microsemi corporation page 6 of 6 2n3418 thru 2n3421 package dimensions 1. dimensions are in inches. 2. millimeters are given for general information only. 3. symbol tl is measured from hd maximum. 4. details of outline in this zone are optional. 5. symbol cd shall not vary more than .010 inch (0.25 mm) in zone p. this zone is control led for automatic handling. 6. leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) - .000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of tp relative to tab. device may be measured by direct methods or by gauge. 7. symbol lu applies between l1 and l2. dimension ld applies between l2 and ll minimum. diameter is uncontrolled in l1 and beyond ll minimum. 8. lead number 3 is electrically connected to case. 9. beyond r maximum, tw shall be held for a minimum length of .021 inch (0.53 mm). 10. lead number 4 omitted on this variation. 11. symbol r applied to both inside corners of tab. 12. for transistor types 2n3418, 2n3419, 2n3420, 2n3421, ll is 1.500 (38.10 mm) minimum, and 1.750 (44.45 mm) maximum. 13. in accordance with asme y14.5m, diameters are equivalent to x symbology. 14. lead 1 is emitter, lead 2 is base, and lead 3 is collector. dimensions symbol inch millimeters note min max min max cd .305 .335 7.75 8.51 ch .240 .260 6.10 6.60 hd .335 .370 8.51 9.40 lc .200 tp 5.08 tp 6 ld .016 .021 0.41 0.53 ll .500 .750 12.7 19.05 7 lu se e notes 7, 13, 14 l 1 .050 1.27 7 l 2 .250 6.35 7 p .100 2.54 5 q .040 1.02 4 tl .029 .045 0.74 1.14 3, 10 tw .028 .034 0.71 .86 9, 10 r .010 0.25 11 45 tp 45 tp 6 downloaded from: http:///
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